@@ -634,8 +634,7 @@ static void nand_command(struct mtd_info *mtd, unsigned int command,
chip->cmd_ctrl(mtd, page_addr, ctrl);
ctrl &= ~NAND_CTRL_CHANGE;
chip->cmd_ctrl(mtd, page_addr >> 8, ctrl);
- /* One more address cycle for devices > 32MiB */
- if (chip->chipsize > (32 << 20))
+ if (chip->options & NAND_ROW_ADDR_3)
chip->cmd_ctrl(mtd, page_addr >> 16, ctrl);
}
chip->cmd_ctrl(mtd, NAND_CMD_NONE, NAND_NCE | NAND_CTRL_CHANGE);
@@ -729,8 +728,7 @@ static void nand_command_lp(struct mtd_info *mtd, unsigned int command,
chip->cmd_ctrl(mtd, page_addr, ctrl);
chip->cmd_ctrl(mtd, page_addr >> 8,
NAND_NCE | NAND_ALE);
- /* One more address cycle for devices > 128MiB */
- if (chip->chipsize > (128 << 20))
+ if (chip->options & NAND_ROW_ADDR_3)
chip->cmd_ctrl(mtd, page_addr >> 16,
NAND_NCE | NAND_ALE);
}
@@ -3889,6 +3887,9 @@ ident_done:
chip->chip_shift += 32 - 1;
}
+ if (chip->chip_shift - chip->page_shift > 16)
+ chip->options |= NAND_ROW_ADDR_3;
+
chip->badblockbits = 8;
chip->erase = single_erase;
@@ -204,6 +204,9 @@ typedef enum {
*/
#define NAND_NEED_SCRAMBLING 0x00002000
+/* Device needs 3rd row address cycle */
+#define NAND_ROW_ADDR_3 0x00004000
+
/* Options valid for Samsung large page devices */
#define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG